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| BB804... Silicon Variable Capacitance Diode For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes Uniform "square law" characteristics Ideal HiFi tuning device when used in low-distortion, back-to-back configuration BB804 3 D1 D2 1 2 Type BB804 Package SOT23 Configuration common cathode LS(nH) Marking 1.8 SF1/2/3* *For differences see next page Capacitance groups Maximum Ratings at TA = 25C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage Peak reverse voltage Forward current Operating temperature range Storage temperature VR VRM IF Top Tstg 18 20 50 -55 ... 125 -55 ... 150 V mA C 1 Nov-07-2002 BB804... Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 16 V VR = 16 V, TA = 65 C AC Characteristics Diode capacitance1) VR = 2 V, f = 1 MHz CT CT2 /CT8 rS Q TCC Unit max. nA 20 200 typ. - IR - 42 1.65 - 1.71 0.18 200 330 47.5 - pF Capacitance ratio VR = 2 V, VR = 8 V, f = 1 MHz VR = 2 V, f = 100 MHz Figure of merit f = 100 MHz, VR = 2 V Temperature coefficient of diode capacitance VR = 2 V, f = 1 MHz 1 Capacitance groups at 2V , coded 1; 2 ; 3 CT/groups 1 2 3 C2V C2V min max 43pF 44.5pF 44pF 45.5pF 45pF 46.5pF The capacitance subgroup is marked by the subgroup number printed on the component and the package label. A packing unit (e.g. 8mm tape) contain diodes of one subgroup only. Delivery of different capacitance subgroups requires a special agreement. 2 Nov-07-2002 ppm/K Series resistance BB804... Diode capacitance CT = f = 1MHz 80 pF 70 60 f = 1MHz EHD07050 3 C T ref CT C T1V CT CT 2 50 40 30 1 20 10 0 10 -1 10 0 10 1 V VR 10 2 0 0 5 10 10 -3 TC C 1 K 10 -4 10 -5 10 -1 100 101 Temperatur coefficient TCC = (V R) EHD07052 V VR 10 2 3 Nov-07-2002 (VR) Capacitance ratio CTref /CT = (VR ) EHD07051 C T2V CT 15 V 20 VR |
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